What is a transistor? A modern transistor is an electronic device that uses a semiconductor to amplify or switch electronic
CMOS technology advantages, Substrate preparation, Oxidation, Etching, Patterning, Photoresists, Ion-implantation, Self-aligned source/drain patterning
Small signal model, high-frequency and low-frequency model, Common Drain, Common Gate, Common Source, Transconductance, thermal noise, flicker noise, capacitances,etc.
Advantages of compound transistors, Darlington-pair (CC-CE), Sziklai Darlington, CC-CB stage, Frequency response, Input impedance, Phase reversal in BJT op-amps.
Operation and working, Cross Section, Current and Voltage characteristics
Operation and working, Cross Section, Current and Voltage characteristics
Memory devices, Tunneling, Hot carrier injection, Aging, Non-volatile memory (NVM), Programming the NVM
Simplified cross-section diagram of PNP BJT, Small signal model, Symbol of PNP BJT, Single stage amplifiers (CE, CC, CB), Biasing
Simplified cross-section diagram of NPN BJT, Small signal model, Symbol of NPN BJT, Single stage amplifiers (CE, CC, CB), Biasing
Parasitic BJT in CMOS, lateral n-p-n and vertical p-n-p, SCR, subtrate resistance, guard rings, Positive feedback, epitaxial process etc.
Junction Field-Effect Transistors (JFETs) are three-terminal semiconductor devices used in electronics to provide a robust high impedance with lower noise.
MOS vs BJT, Emitter, Base, Collector, NPN, PNP, Cutoff region, Saturation region, Forward active region, Carrier density, I-V characteristics, Gummel
Energy band diagram, Drift current, Terminals in a MOSFET, Threshold voltage, Small signal model, Channel length modulation, Pinch-off region, Linear
Circuit symbol, Working principle of insulated gate bipolar transistor, structure of IGBTs, advantages of IGBTs, modes of operation of IGBTs
High power, fast switching, DC model, Switching Model, Specifications of power MOSFET, Channel resistance, Parasitic capacitance, Heat dissipation, Packages available