Small signal model, high-frequency and low-frequency model, Common Drain, Common Gate, Common Source, Transconductance, thermal noise, flicker noise, capacitances,etc.

Advantages of compound transistors, Darlington-pair (CC-CE), Sziklai Darlington, CC-CB stage, Frequency response, Input impedance, Phase reversal in BJT op-amps.

Operation and working, Cross Section, Current and Voltage characteristics

Operation and working, Cross Section, Current and Voltage characteristics

Memory devices, Tunneling, Hot carrier injection, Aging, Non-volatile memory (NVM), Programming the NVM

Simplified cross-section diagram of PNP BJT, Small signal model, Symbol of PNP BJT, Single stage amplifiers (CE, CC, CB), Biasing

Simplified cross-section diagram of NPN BJT, Small signal model, Symbol of NPN BJT, Single stage amplifiers (CE, CC, CB), Biasing

Parasitic BJT in CMOS, lateral n-p-n and vertical p-n-p, SCR, subtrate resistance, guard rings, Positive feedback, epitaxial process etc.

Small signal model, high-frequency and low-frequency model, Common collector, Common base, Common emitter, Transconductance, thermal noise, shot noise, flicker noise,

Field effect transistor, Depletion region, Channel width modulation, I-V characteristics, Drift current, Small signal model, Noise.

MOS vs BJT, Emitter, Base, Collector, NPN, PNP, Cutoff region, Saturation region, Forward active region, Carrier density, I-V characteristics, Gummel

Energy band diagram, Drift current, Terminals in a MOSFET, Threshold voltage, Small signal model, Channel length modulation, Pinch-off region, Linear